Transient thermal resistance test systems

GaAs power device analyzer (GaAs-FET) DGV-J 10

The DGV - J 10 increases the VD voltage to 100 V, enabling power application up to 200 W. Power time is 9.99 sec, ΔVGS is measured with 0.1 mV resolution.    Please click for more information.

High power thermal resistance test system (TRANSISTOR, IGBT, DIODE) DVF 540 ZZ GC

DVF540ZZGC is a high power thermal resistance tester with maximum applied current 3600A. This overwhelming power area is ideal for thermal evaluation of power semiconductors such as power modules.    Please click for more information.

IPS thermal resistance / temperature measurement test system (INTELLIGENT POWER SWITCH) DVIPS-L30A

We measure various characteristics such as control, drive, thermal change and self-diagnosis operation in IPS with high accuracy.    Please click for more information.

LED transient thermal resistance measuring device (LED) DVLE-D 03

DVLE - D 03 can continuously measure by switching LEDs with up to 20 elements. Power time is 9,990 sec, VF is displayed up to 32,000 mV.    Please click for more information.

Semiconductor safety operation area test system (IGBT, DIODE) DDVF 024 ZZ

It measures the thermal resistance of the diode and measures the thermal resistance by using the VCEON voltage of the IGBT and has the applied power up to 2400A. By installing an optional thermostatic oven in the system, the temperature of the thermostatic…

Transient thermal resistance measuring instrument (MOS-FET, IGBT, DIODE) DVFN 230 Z

It is a high-power thermal resistance tester with power up to 300 A - 20 kV applied.    Please click for more information.

Transient thermal resistance measuring instrument (MOS-FET, MOS-FET, IGBT, DIODE) DVFN 1010 Z

It is a renewal model of 1000V, 100A type which has been introduced many times in R & D department, evaluation department and so on. For 39.9 A setting, 999 sec long time application is possible.    Please click for more information.

Transient thermal resistance measuring instrument (TRANSISTOR, MOS-FET, DIODE) DVN 210

Measure transient thermal resistance (θjc) of transistor, MOS-FET · diode as temperature change (ΔmV) of PN junction. Contact check and oscillation detection function are equipped.    Please click for more information.

Transient thermal resistance measuring instrument (TRANSISTOR, MOS-FET, IGBT, DIODE) DVFN 2050

DVFN 2050 is a thermal resistance measuring instrument with performance of 2000 V maximum applied voltage. It is possible to apply 999 sec with 1200 W line and is ideal for thermal evaluation of high voltage of power device.    Please click for more…